8050 Datasheet, PDF (1/5 Pages) Micro Electronics – NPN EPITAXIAL SILICON PLANAR TRANSISTOR

8050
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into four groups, B, C, D
and E, according to its DC current gain. As
complementary type the PNP transistor ST 8550 is
recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T_a = 25℃)
Symbol
Value
Unit
Collector Emitter Voltage
V_CEO
25
V
Collector Base Voltage
V_CBO
40
V
Emitter Base Voltage
V_EBO
6
V
Collector Current
I_C
800
mA
Peak Collector Current
I_CM
1
A
Base Current
I_B
100
mA
Power Dissipation
P_tot
625¹⁾
mW
Junction Temperature
T_j
150
O_C
Storage Temperature Range
T_S
-55 to +150
O_C
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case}