DS1743 Datasheet, PDF (7/17 Pages) Dallas Semiconductor – Y2KC Nonvolatile Timekeeping RAM

DS1743/DS1743P
DC ELECTRICAL CHARACTERISTICS
PARAMETER
(Over the Operating Range; V_CC = 3.3V ± 10%)
SYMBOL MIN TYP
MAX UNITS NOTES
Active Supply Current
I_CC
10
30
TTL Standby Current ( CE = V_IH )
I_CC1
0.7
2
CMOS Standby Current
I_CC2
0.7
2
( CE ≥=V_CC - 0.2V, CE2 =
GND + 0.2V)
Input Leakage Current (any input)
I_IL
-1
+1
Output Leakage Current
I_OL
-1
+1
(any output)
Output Logic 1 Voltage
(I_OUT = -1.0 mA)
V_OH
2.4
Output Logic 0 Voltage
(I_OUT =2.1 mA)
V_OL1
0.4
Write Protection Voltage
V_PF
2.80
2.97
Battery Switch-over Voltage
V_SO
V_BAT
or V_PF
mA
2, 3
mA
2, 3
mA
2, 3
µA
µA
1
1
V
1
V
1, 4
READ CYCLE, AC CHARACTERISTICS
(Over the Operating Range; V_CC = 5.0V ± 10%)
70 ns access 100 ns access
PARAMETER
SYMBOL ^{MIN MAX MIN MAX} UNITS NOTES
Read Cycle Time
t_RC
70
100
ns
5
Address Access Time
t_AA
70
100
ns
5
CE to CE2 to DQ Low-Z
t_CEL
5
5
ns
5
CE Access Time
t_CEA
70
100
ns
5
CE2 Access Time
t_CE2A
80
105
ns
5
CE and CE2 Data Off time
t_CEZ
25
35
ns
5
OE to DQ Low-Z
t_OEL
5
5
ns
5
OE Access Time
t_OEA
35
55
ns
5
OE Data Off Time
t_OEZ
25
35
ns
5
Output Hold from Address
t_OH
5
5
ns
5
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