DS1710 Datasheet, PDF (6/14 Pages) Dallas Semiconductor – Partitioned NV Controller

DC ELECTRICAL CHARACTERISTICS
PARAMETER
Operating Current
Standby Current
Supply Voltage
Supply Current
Input Leakage
Output Leakage
PFO , WEO Output @ 2.4V
PFO , WEO Output @ 0.4V
V_CC Trip Point (TOL=GND)
V_CC Trip Point (TOL=V_CC)
V_CC Trip Point
CEI to CEO Impedance
DIS Pulldown Resistance
SYMBOL
I_CC1
I_CC2
V_CCO
I_CCO1
I_IL
I_LO
I_OH
I_OL
V_CCTP1
V_CCTP1
V_CCTP2
Z_CE
R_DIS
MIN
V_CC-0.2
-1.0
-1.0
-1.0
4.50
4.25
2.50
50k
DS1710
(0°C to 70°C; V_CCI=4.5V to 5.5V)
TYP MAX UNITS NOTES
5
mA
3, 14
200
µA
3, 15
V
1
150
mA
4
+1.0
µA
+1.0
µA
mA
10, 16
4.0
mA
10, 16
4.62
4.75
V
1, 16
4.37
4.50
V
1, 16
2.60
2.70
V
1, 16
30
Ω
5
250k
Ω
(0°C to 70°C; V_CCI=4.75V to 5.50V, TOL=GND)
AC ELECTRICAL CHARACTERISTICS
(V_CCI=4.50V to 5.50V, TOL=V_CCO)
PARAMETER
SYMBOL MIN
TYP MAX UNITS NOTES
Address Setup
t_AS
0
ns
Address Hold
t_AH
50
ns
Read Recovery
CEI , WEI Pulse Width
t_RR
20
t_CW
75
ns
9
ns
CEI to CEO Falling
t_PDF
5
ns
10
Propagation Delay
Later of CEI , WEI to WEO
t_PDF
20
ns
10, 11
Falling Propagation Delay
CEI to CEO Rising
t_PDR
5
ns
10
Propagation Delay
Earlier of CEI , WEI to WEO
t_PDR
5
ns
10, 11
Rising Propagation Delay
Write Recovery
t_WR
10
ns
11
AC ELECTRICAL CHARACTERISTICS
PARAMETER
Recovery at Power-up
V_CC Slew Rate Power-down
V_CC Slew Rate Power-down
V_CC Slew Rate Power-up
CEO Pulse Width
WEI Pulse Width
SYMBOL
t_REC
t_F
t_FB
t_R
t_CE
t_CE
MIN
100
300
10
0
(0°C to 70°C, 5V Operation)
TYP
MAX UNITS NOTES
200
ms
12
µs
µs
µs
13
1.5
µs
7, 8
1.5
µs
7, 8
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