DS1265W Datasheet, PDF (4/8 Pages) Dallas Semiconductor – 3.3V 8Mb Nonvolatile SRAM

DS1265W
AC ELECTRICAL CHARACTERISTICS (T_A: See Note 10; V_CC = 3.3V ± 0.3V)
DS1265W-100 DS1265W-150
PARAMETER
SYMBOL MIN MAX MIN MAX UNITS NOTES
Read Cycle Time
t_RC
100
150
ns
Access Time
t_ACC
100
150
ns
OE to Output Valid
t_OE
50
70
ns
CE to Output Valid
t_CO
100
150
ns
OE or CE to Output Active
t_COE
5
5
ns
5
Output High-Z from Deselection
t_OD
35
35
ns
5
Output Hold from Address Change
t_OH
5
5
ns
Write Cycle Time
t_WC
100
150
ns
Write Pulse Width
t_WP
75
100
ns
3
Address Setup Time
t_AW
0
0
ns
Write Recovery Time
t_WR1
5
5
t_WR2
20
20
ns
12
ns
13
Output High-Z from WE
t_ODW
35
35
ns
5
Output Active from WE
t_OEW
5
5
ns
5
Data Setup Time
t_DS
40
60
ns
4
Data Hold Time
t_DH1
0
0
t_DH2
20
20
ns
12
ns
13
TIMING DIAGRAM: READ CYCLE
SEE NOTE 1
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