DS1265W Datasheet, PDF (1/8 Pages) Dallas Semiconductor – 3.3V 8Mb Nonvolatile SRAM

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DS1265W
3.3V 8Mb Nonvolatile SRAM
FEATURES
§ 10 years minimum data retention in the
absence of external power
§ Data is automatically protected during power
loss
§ Unlimited write cycles
§ Low-power CMOS operation
§ Read and write access times as fast as 100ns
§ Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
§ Optional industrial (IND) temperature range
of -40°C to +85°C
PIN ASSIGNMENT
NC 1
NC 2
A18 3
A16 4
A14 5
A12 6
A7 7
A6 8
A5 9
A4 10
A3 11
A2 ¹²
A1 ¹³
A0 14
DQ0 15
DQ1 16
DQ2 ¹⁷
GND 18
36
VCC
35 A19
34 NC
33 A15
32 A17
31 WE
30 A13
29 A8
28 A9
27 A11
26 OE
25 A10
24 CE
23 DQ7
22 DQ6
21 DQ5
20 DQ4
19 DQ3
36-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0–A19
- Address Inputs
DQ0–DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
V_CC
GND
- Power (+3.3V)
- Ground
NC
- No Connect
DESCRIPTION
The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor interfacing.
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