DS1265W Datasheet, PDF (3/8 Pages) Dallas Semiconductor – 3.3V 8Mb Nonvolatile SRAM

ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
DS1265W
-0.3V to +4.6V
0°C to +70°C (-40°C to +85°C for IND parts)
-40°C to +70°C (-40°C to +85°C for IND parts)
+260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
Power-Supply Voltage
V_CC
3.0 3.3
Logic 1 Input Voltage
V_IH
2.2
Logic 0 Input Voltage
V_IL
0.0
(T_A: See Note 10)
MAX UNITS NOTES
3.6
V
V_CC
V
+0.4
V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
I_IL
I/O Leakage Current
I_IO
Output Current at 2.2V
I_OH
Output Current at 0.4V
I_OL
Standby Current CE = 2.2V
I_CCS1
Standby Current CE = V_CC - 0.2V
I_CCS2
Operating Current
I_CCO1
Write Protection Voltage
V_TP
(T_A: See Note 10; V_CC = 3.3V ± 0.3V)
MIN TYP MAX UNITS NOTES
-2.0
+2.0
mA
-2.0
+2.0
mA
-1.0
mA
2.0
mA
150 250
mA
100 150
mA
50
mA
2.8 2.9
3.0
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
10
10
MAX
20
20
(T_A = +25°C)
UNITS NOTES
pF
pF
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