DS1556 Datasheet, PDF (11/20 Pages) Dallas Semiconductor – 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM

DS1556 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
DC ELECTRICAL CHARACTERISTICS
(V_CC = 3.3V ±10%, Over the Operating Range.)
PARAMETER
SYMBOL
CONDITIONS
Active Supply Current
TTL Standby Current
(CE = V_IH)
CMOS Standby Current
(CE ³ V_CC - 0.2V)
Input Leakage Current
(Any Input)
Output Leakage Current
(Any Output)
Output Logic 1 Voltage
(I_OUT = -1.0 mA)
Output Logic 0 Voltage
I_CC
I_CC1
I_CC2
I_IL
I_OL
V_OH
V_OL1
V_OL2
(Notes 2, 3)
(Notes 2, 3)
(Notes 2, 3)
(Note 1)
I_OUT = 2.1 mA, DQ0–7
Outputs (Note 1)
I_OUT = 7.0 mA, IRQ/FT
and RST Outputs
(Notes 1, 5)
Write Protection Voltage
V_PF
(Note 1)
Battery Switchover Voltage
V_SO
(Notes 1,4)
MIN TYP MAX UNITS
20 30
mA
2
6
mA
1
4
mA
-1
+1
mA
-1
+1
mA
2.4
V
0.4
V
0.4
V
2.75
2.97
V
V_BAT
or
V
V_PF
Figure 5. Read Cycle Timing Diagram
11 of 20