MTC4703H8 Datasheet, PDF (7/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C923H8
Issued Date : 2016.09.14
Revised Date :
Page No. : 7/14
Typical Characteristics(Cont.) : Q1( N-channel)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1.2
C _oss
1
ID=1mA
100
0.8
Crss
0.6
ID=250μA
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
1
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=50°C/W, Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
8
VDS=15V
6
4
VDS=24V
2
ID=6A
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
14
12
10
8
6
4
TA=25°C, VGS=10V
2
RθJA=50°C/W
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTC4703H8
CYStek Product Specification