MTC4703H8 Datasheet, PDF (10/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C923H8
Issued Date : 2016.09.14
Revised Date :
Page No. : 10/14
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
10000
1.4
Threshold Voltage vs Junction Tempearture
1000
1.2
Ciss
1
ID=-1mA
C _oss
0.8
100
Crss
0.6
ID=-250μA
10
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
1
VDS=-10V
Pulsed
TA=25°C
0.1
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1ms
10ms
1
100ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=50°C/W, Single Pulse
0.01
0.01
0.1
1
10
-ID, Drain-Source Voltage(V)
1s
DC
100
8
VDS=-15V
6
4
VDS=-24V
2
ID=-6A
0
0 4 8 12 16 20 24 28 32 36
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
TA=25°C, VGS=-10V
1
RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC4703H8
CYStek Product Specification