MTC4703H8 Datasheet, PDF (6/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C923H8
Issued Date : 2016.09.14
Revised Date :
Page No. : 6/14
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
40
35
4.5V
30
25
10V, 9V, 8V, 7V, 6V, 5V
4V
20
15
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
10
5
0
0
3.5V
VGS=3V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
10
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=6A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2.2
2
VGS=10V, ID=6A
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
RDS(ON)@Tj=25°C : 8.7mΩ typ.
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC4703H8
CYStek Product Specification