MTC4703H8 Datasheet, PDF (3/14 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*VSD
-
*trr
-
*Qrr
-
CYStech Electronics Corp.
Spec. No. : C923H8
Issued Date : 2016.09.14
Revised Date :
Page No. : 3/14
9
-
16.8
30
-
-
ns
VDS=15V, ID=6A, VGS=10V, RG=1Ω
8.6
-
7.7
11.6
2.4
-
nC VDS=24V, ID=6A, VGS=4.5V
3.2
-
0.8
1.2
V
VGS=0V, IS=6A
10.8
4.5
-
-
ns
nC
IF=6A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
-30
VGS(th)
-1.0
-
-
V
VGS=0V, ID=-250μA
-
-2.5
VDS=VGS, ID=-250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
-1
-25
μA
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V, Tj=125°C
*RDS(ON)
-
15.3
20
mΩ ^{ID=-6A, VGS=-10V}
-
21.9
30
ID=-4A, VGS=-4.5V
*GFS
-
11
-
S
VDS=-10V, ID=-6A
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*VSD
-
*trr
-
*Qrr
-
1466
151
133
11
22.2
64
11.8
18
4.6
8.4
-0.85
13
7
2199
-
-
-
-
-
-
27
-
-
-1.2
-
-
pF VDS=-25V, VGS=0V, f=1MHz
ns
VDS=-15V, ID=-6A, VGS=-10V, RG=1Ω
nC VDS=-24V, ID=-6A, VGS=-4.5V
V
VGS=0V, IS=-6A
ns
nC
IF=-6A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4703H8
CYStek Product Specification