MTD011N10RJ3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
80
70
VDS=10V
60
50
2000
1800
1600
1400
1200
Single Pulse Power Rating, Junction to Case
TJ(MAX)=175°C
TC=25°C
RθJC=2.5°C/W
40
1000
800
30
600
20
400
10
200
0
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
0
0.001 0.01
0.1
1
10
Pulse Width(s)
100 1000
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTD011N10RJ3
CYStek Product Specification