MTD011N10RJ3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
100
Crss
10
0
5 10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V
8
VDS=50V
6
1
VDS=15V
4
VDS=80V
0.1
Ta=25°C
Pulsed
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
2
ID=11A
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
60
RDSON
100 Limited
100μs
1ms
10
10ms
100ms
1s
1 _{TC=25°C, Tj=175°C}
VGS=10V, RθJC=2.5°C/W
DC
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
50
40
30
20
10 ^{Tj(max)=175°C,VGS=10V, RθJC=2.5°C/W}
Single Pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTD011N10RJ3
CYStek Product Specification