MTD011N10RJ3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
100
∆BVDSS/∆Tj
-
VGS(th)
1.2
*GFS
-
IGSS
-
-
IDSS
-
*RDS(ON)
-
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
74
-
25.4
-
-
-
8.4
9.4
71.8
10.5
12.7
20
19.2
74
10.8
3656
286
25
-
-
0.84
34
54
-
-
2.6
-
±100
1
5
11
13
-
-
-
-
-
-
-
-
-
-
48
192
1.2
-
-
V
mV/°C
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=55°C
VGS =10V, ID=11A
VGS =6V, ID=6A
nC
VDD=50V, ID=11A,VGS=10V
ns
VDD=50V, ID=11A, VGS=10V,
RG=3Ω
pF
VGS=0V, VDS=30V, f=1MHz
A
V
IS=22A, VGS=0V
ns
nC
VGS=0V, IF=22A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTD011N10RJ3
CYStek Product Specification