MTD011N10RJ3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C169J3
Issued Date : 2016.07.27
Revised Date :
Page No. : 4/ 9
Typical Characteristics
80
70
60
50
40
30
20
10
0
0
Typical Output Characteristics
4V
10V, 9V, 8V, 7V, 6V, 5V
3.5V
VGS=2.5V
3V
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
10
VGS=4.5V
6V
10V
1
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
ID=11A
400
300
200
100
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0 2 4 6 8 10 12 14 16 18 20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=10V, ID=11A
2
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 8.4mΩ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD011N10RJ3
CYStek Product Specification