MTBH0N25J3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
8
7
VDS=10V
6
5
4
3
2
1
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
1000
900
800
700
600
500
400
300
200
100
0
0.001
Single Pulse Power Rating, Junction to Case
TJ(MAX)=175°C
TC=25°C
RθJC=5°C/W
0.01
0.1
1
10
100
Pulse Width(s)
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Transient Thermal Response Curves
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=5°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTBH0N25J3
CYStek Product Specification