MTBH0N25J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 3/9
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
250
-
-
V
VGS=0V, ID=250μA
1
-
2.5
VDS =VGS, ID=250μA
-
-
±100
nA V_GS=±20V, V_DS=0V
IDSS
-
-
RDS(ON) *1
-
-
GFS *1
-
Dynamic
-
-
1
25
μA
VDS =200V, VGS =0V
VDS =200V, VGS =0V, TJ=125°C
780
980
mΩ ^{VGS =10V, ID=3A}
735
960
VGS =4.5V, ID=2A
6.2
-
S VDS =15V, ID=3A
Qg *1, 2
Qgs *1, 2
-
11.8
-
-
1.5
-
nC VDS=200V, ID=3A, VGS=10V
Qgd *1, 2
-
4.7
-
td(ON) *1, 2
-
6
-
tr *1, 2
td(OFF) *1, 2
-
-
16
28.2
-
-
ns VDS=125V, ID=1A, VGS=10V, RG=6Ω
tf *1, 2
Ciss
-
23.4
-
-
382
-
Coss
-
32.3
-
pF VGS=0V, VDS=25V, f=1MHz
Crss
-
16.3
-
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
3.5
8
A
VSD *1
-
0.77
1
V
trr
-
42
-
ns
Qrr
-
58
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=1A, VGS=0V
IF=1A, dIF/dt=100A/μs
Recommended soldering footprint
MTBH0N25J3
CYStek Product Specification