MTBH0N25J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
8
10V
7
9V
8V
6
7V
6V
5
5V
4.5V
4
4V
3.5V
3
VGS=3V
2
1
0
0
3
6
9
12
15
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
10000
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
1000
100
0.01
VGS=3V
VGS=4.5V
VGS=10V
0.1
1
10
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1600
1400
ID=3A
1200
1000
800
600
400
200
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.8
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3
2.5
VGS=10V, ID=3A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 780mΩ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTBH0N25J3
CYStek Product Specification