MTBH0N25J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C _oss
10
0
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1
VDS=15V
Gate Charge Characteristics
10
8
6
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
10
RDSON
Limited
1
100μs
1ms
10ms
100m
1s
0.1
TC=25°C, Tj=175°C
VGS=10V, RθJC=5°C/W
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
DC
1000
4
VDS=200V
2
ID=3A
0
0
2
4
6
8
10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
4
3.5
3
2.5
2
1.5
1
0.5 ^{VGS=10V, RθJC=5°C/W}
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTBH0N25J3
CYStek Product Specification