MTB5D0P03FP Datasheet, PDF (6/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 6/8
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
10000
1000
TJ(MAX)=150°C
TC=25°C
RθJC=2°C/W
100
10
1E-05 0.0001 0.001 0.01 0.1 1
Pulse Width(s)
10 100
Typical Transfer Characteristics
200
180
VDS=-10V
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2°C/W
0.01
0.001
1.E-05
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB5D0P03FP
CYStek Product Specification