MTB5D0P03FP Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
1.2
1
C _oss
0.8
ID=-1mA
Crss
0.6
ID=-250μA
100
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=-5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
-ID, Drain Current(A)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=-5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
-ID, Drain Current(A)
8
6
4
2
VDS=-24V
ID=-25A
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Maximum Drain Current vs CaseTemperature
90
80
Silicon Limit
70
60
50
40
Limited by package
30
20
10
VGS=-10V, RθJC=2°C/W
0
25
50
75 100 125 150 175
TC, Case Temperature(°C)
MTB5D0P03FP
CYStek Product Specification