MTB5D0P03FP Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 3/8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
-30
VGS(th)
-1.0
GFS
-
IGSS
-
IDSS
-
-
*RDS(ON)
-
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*IS
-
*VSD
-
*trr
-
*Qrr
-
-
-
62
-
-
-
4.2
4.8
121
18.6
24.5
19.4
21.6
133
49.2
6290
761
375
-
-0.83
26
17
-
-2.5
-
±100
-1
-25
5.5
7.5
181
-
-
29
32
200
74
-
-
-
-56
-1.2
40
-
V
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
S
VDS =-5V, ID=-25A
nA V_GS=±20V
μA
VDS =-30V, VGS =0V
VDS =-30V, VGS =0V, Tj=70°C
mΩ ^{VGS =-10V, ID=-25A}
VGS =-4.5V, ID=-10A
nC ID=-25A, VDS=-24V, VGS=-10V
ns
VDS=-15V, VGS=-10V, RG=2.7Ω,
ID=-25A
pF VGS=0V, VDS=-25V, f=1MHz
A
V
IS=-25A, VGS=0V
ns
nC
IF=-25A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB5D0P03FP
CYStek Product Specification