MTB3D0N03BH8 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999H8
Issued Date : 2015.03.10
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
200
180
VDS=10V
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
3000
Single Pulse Maximum Power Dissipation
2500
2000
1500
TJ(MAX)=150°C
TC=25°C
θ JC=2.5°C/W
1000
500
0
1E-04 0.001 0.01 0.1 1 10
Pulse Width(s)
100 1000
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5 °C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB3D0N03BH8
CYStek Product Specification