MTB3D0N03BH8 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999H8
Issued Date : 2015.03.10
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg (VGS=10V) *1, 2
-
47.2
-
Qg (VGS=4.5V) *1, 2
-
Qgs *1, 2
-
24
8.3
-
-
nC _{VDS=15V, VGS=10V, ID=30A}
Qgd *1, 2
-
10.2
-
td(ON) *1, 2
-
16.4
-
tr *1, 2
td(OFF) *1, 2
-
-
19.2
53.4
-
-
VDS=15V, ID=24A, VGS=10V,
ns
RGS=2.7Ω
tf *1, 2
-
12.2
-
Rg
-
0.76
-
Ω f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
60
-
-
200
A
VSD *1
-
0.81
1.2
V
trr
-
16.1
-
ns
Qrr
-
8.4
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=20A, VGS=0V
IF=24A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB3D0N03BH8
unit : mm
CYStek Product Specification