MTB3D0N03BH8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999H8
Issued Date : 2015.03.10
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(Silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V(Silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(Package limit)
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=46A, RG=25Ω
TC=25℃
Total Power Dissipation
TC=100℃
TA=25℃
TA=70℃
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=30A, Rated VDS=30V N-CH
Limits
Unit
30
V
±20
86
54
60
19.2 *3 A
15.4 *3
200 *1
46
106
mJ
50
20
W
2.5 *3
1.6 *3
-55~+150 °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3 °C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
-
-
V
VGS=0V, ID=250μA
VGS(th)
1.0
-
2.5
V
VDS = VGS, ID=250μA
GFS *1
-
IGSS
-
41
-
S
VDS =5V, ID=20A
-
±100
nA V_GS=±20V
IDSS
-
-
-
RDS(ON) *1
-
-
-
1
25
μA
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
2.5
3.5
mΩ VGS =10V, ID=30A
3.5
5.0
mΩ VGS =4.5V, ID=24A
Dynamic
Ciss
-
2355
-
Coss
-
419
-
pF
VGS=0V, VDS=15V, f=1MHz
Crss
-
232
-
MTB3D0N03BH8
CYStek Product Specification