MTB3D0N03BH8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999H8
Issued Date : 2015.03.10
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
1.2
1
C _oss
0.8
ID=1mA
100
0.1
Crss
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
100 R_DS(ON)
Limit
10
1
TC=25°C, Tj=150°C,
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.1
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μ s
1ms
10ms
100ms
1s
DC
100
8
6
4
2
VDS=15V
ID=30A
0
0
10
20
30
40
50
Total Gate Charge---Qg(nC)
100
90
80
70
60
50
40
30
20
10
0
25
Maximum Drain Current vs Case Temperature
Silicon Limit
Package Limit
VGS=10V, RθJC=2.5°C/W
50 75 100 125 150 175
TC, Case Temperature(°C)
MTB3D0N03BH8
CYStek Product Specification