MTB3D0N03BE3 Datasheet, PDF (6/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999E3
Issued Date : 2015.12.30
Revised Date :
Page No. : 6/ 8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
200
180
VDS=10V
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Case
3000
2700
2400
2100
1800
TJ(MAX)=150°C
TC=25°C
RθJC=1.4°C/W
1500
1200
900
600
300
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.4°C/W
0.001
1.E-05
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB3D0N03BE3
CYStek Product Specification