MTB3D0N03BE3 Datasheet, PDF (4/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999E3
Issued Date : 2015.12.30
Revised Date :
Page No. : 4/ 8
Typical Characteristics
200
180
160
140
120
100
80
60
40
20
0
0
Typical Output Characteristics
10V,9V,8V,7V,6V 5V
4.5V
4V
3.5V
VGS=3V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
10
VGS=4.5V
VGS=10V
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
ID=30A
80
60
40
20
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3.2
2.8 _{VGS=4.5V, ID=20A}
2.4 ^{RDSON @ Tj=25°C : 5.0mΩ typ}
2
1.6
1.2
0.8
VGS=10V, ID=30A
0.4
RDSON @ Tj=25°C : 4.2 mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB3D0N03BE3
CYStek Product Specification