MTB3D0N03BE3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999E3
Issued Date : 2015.12.30
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
C _oss
0.8
ID=1mA
Crss
100
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
VDS=15V
1
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01
0.1
1
10
100
ID, Drain Current(A)
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
VDS=15V
2
ID=20A
0
0 6 12 18 24 30 36 42 48 54 60
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
RDSON
Limited
100
10μs
100μs
10
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=1.4°C/W
Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
DC
100
Maximum Drain Current vs Case Temperature
120
100
Silicon limit
80
60
Package limit
40
20
VGS=10V, RθJC=1.4°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB3D0N03BE3
CYStek Product Specification