MTB3D0N03BE3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C999E3
Issued Date : 2015.12.30
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol Limits Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
30
V
VGS
±20
Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 1)
89
Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1) ID
74
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
56
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
IDSM
13.7
A
(Note 2)
10.9
Pulsed Drain Current
IDM
280
Avalanche Current
IAS
46
Single Pulse Avalanche Energy @ L=0.1mH, ID=46Amps, VDD=15V
EAS
(Note 4)
Repetitive Avalanche Energy
(Note 3)
EAR
106
mJ
6
Power Dissipation
TC=25°C
TC=100°C
TA=25°C
TA=70°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
PD
PDSM
89
35.6
W
2.1
1.3
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
TL
300
Maximum Temperature for Soldering @ Package Body for 10
seconds
TPKG
260
°C
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.4
60
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by condition of VDD=15V,
ID=30A, L=0.1mH, VGS=10V.
MTB3D0N03BE3
CYStek Product Specification