MTB20N06KJ3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2016.03.29
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
90
80 ^VDS^=10V
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
3000
2500
2000
Single Pulse Power Rating, Junction to Case
TJ(MAX)=150°C
TC=25°C
Rθ_JC=6°C/W
1500
1000
500
0
1E-05 0.0001 0.001 0.01 0.1
1
10
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=6°C/W
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB20N06KJ3
CYStek Product Specification