MTB20N06KJ3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2016.03.29
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
60
∆BVDSS/∆Tj
-
VGS(th)
1
*GFS
-
IGSS
-
IDSS
-
-
-
*RDS(ON)
-
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
-
V
VGS=0V, ID=250μA
50
-
mV/°C Reference to 25°C, ID=250μA
-
2.5
V
VDS = 10V, ID=1mA
14
-
S
VDS =5V, ID=5A
-
±10
VGS=±16V
-
1
μA V_DS =60V, V_GS =0V
-
5
VDS =48V, VGS =0V, Tj=55°C
13.4
16.8
VGS =10V, ID=8A
15.9
21.5
mΩ VGS =4.5V, ID=6A
17.2
26.0
VGS =4V, ID=4A
18.5
-
1.6
-
8.4
-
8.6
-
17.6
-
39.8
-
20
-
736
-
140
-
70
-
nC
VDD=48V, ID=22A,VGS=10V
ns
VDD=30V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=20V, f=1MHz
-
22
A
-
88
0.8
1.2
V
IS=8A, VGS=0V
14
8.5
-
-
ns
nC
VGS=0V, IF=22A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB20N06KJ3
CYStek Product Specification