MTB20N06KJ3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2016.03.29
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
60
V
VGS
±20
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
ID
(Note 1)
22*
13.9*
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
IDSM
7.6
A
(Note 2)
6.1
Pulsed Drain Current
(Note 3)
IDM
88*
Single Pulse Avalanche Current
IAS
20
Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps,
VDD=30V
(Note 4)
EAS
100
mJ
Repetitive Avalanche Energy
(Note 3)
EAR
2.1
Power Dissipation
TC=25°C
TC=100°C
TA=25°C
TA=70°C
(Note 1)
PD
21
(Note 1)
8.4
(Note 2)
PDSM
2.5
W
(Note 2)
1.6
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
6
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150
°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by condition of VDD=15V, ID=2.4A, L=1mH, VGS=10V.
MTB20N06KJ3
CYStek Product Specification