MTB20N06KJ3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C103J3
Issued Date : 2015.12.31
Revised Date : 2016.03.29
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1000
C _oss
100
Crss
f=1MHz
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
ID=22A
8
VDS=30V
6
4
VDS=48V
2
0
0 2 4 6 8 10 12 14 16 18 20
Qg, Total Gate Charge(nC)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
1ms 100μs
10μs
Maximum Drain Current vs Case Temperature
30
25
20
10
10ms
1
TC=25°C, Tj(max)=150°C _100ms
VGS=10V,RθJC=6°C/W
Single Pulse
DC
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
15
10
5
Tj(max)=150°C,RθJC=6°C/W,
VGS=10V, Single Pulse
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB20N06KJ3
CYStek Product Specification