MTB20N06J3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C925J3
Issued Date : 2013.08.13
Revised Date : 2013.12.30
Page No. : 6/ 9
Typical Characteristics(Cont.)
100
90
80
70
60
50
40
30
20
10
0
0
Typical Transfer Characteristics
VDS=10V
1
2
3
4
VGS, Gate-Source Voltage(V)
3000
2500
2000
1500
1000
500
0
5
0.001
1
D=0.5
Transient Thermal Response Curves
Single Pulse Power Rating, Junction to Case
TJ(MAX)=175°C
TC=25°C
θ_JC=2.5°C/W
0.01
0.1
1
10
100
Pulse Width(s)
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB20N06J3
CYStek Product Specification