MTB20N06J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C925J3
Issued Date : 2013.08.13
Revised Date : 2013.12.30
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
Min. Typ. Max. Unit Test Conditions
BVDSS
60
∆BVDSS/∆Tj
-
VGS(th)
1.0
*GFS
-
IGSS
-
IDSS
-
-
*RDS(ON)
-
-
Dynamic
*Qg(VGS=10V) -
*Qg(VGS=4.5V) -
*Qgs
-
*Qgd
-
-
-
0.04 -
1.5 2.5
27
-
- ±100
-
1
-
10
14.6 20
16.7 25
43
-
23
-
9.6
-
10
-
V
V/°C
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20V
VDS =48V, VGS =0V
VDS =48V, VGS =0V, Tj=125°C
VGS =10V, ID=20A
VGS =4.5V, ID=20A
nC VDD=30V, ID=20A,VGS=10V
*td(ON)
-
14
-
*tr
-
7
-
*td(OFF)
-
27
-
*tf
-
4
-
Ciss
- 2773 -
Coss
-
95
-
Crss
-
65
-
Source-Drain Diode
*IS
-
-
4
*VSD
- 0.69 1
*trr
-
36
-
*Qrr
-
48
-
ns
VDD=30V, ID=20A, VGS=10V, RG=3Ω
pF VGS=0V, VDS=30V, f=1MHz
A
V
IS=1A, VGS=0V
ns
nC
VGS=0, IF=20A, dI/dt=500A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB20N06J3
CYStek Product Specification