MTB20N06J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C925J3
Issued Date : 2013.08.13
Revised Date : 2013.12.30
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
C _oss
0.8
100
Crss
0.6
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=30V
8
ID=20A
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01
0.1
1
10
100
ID, Drain Current(A)
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
1000
100 ^RDSON
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1
0.01
0.1
TC=25°C, Tj=175°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1
10
100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10
5
VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB20N06J3
CYStek Product Specification