MTB20N06J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C925J3
Issued Date : 2013.08.13
Revised Date : 2013.12.30
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol Limits Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
60
V
VGS
±20
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
ID
42
(Note 1)
30
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
(Note 2)
IDSM
8.7
A
7.0
Pulsed Drain Current @ VGS=10V
(Note 3) IDM
100
Avalanche Current
(Note 3) IAR
45
Single Pulse Avalanche Energy @ L=0.1mH, ID=30A, VDD=25V
(Note 2)
EAS
Repetitive Avalanche Energy
(Note 3) EAR
45
mJ
6
Power Dissipation
TC=25°C
TC=100°C
TA=25°C
TA=70°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
PD
PDSM
60
30
W
2.5
1.6
Operating Junction and Storage Temperature
Tj, Tstg -55~+175 °C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
RθJA
Value
2.5
50
110
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTB20N06J3
CYStek Product Specification