MTB115P10KJ3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
Typical Characteristics (Cont.)
Typical Transfer Characteristics
50
45
VDS=-10V
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Single Pulse Maximum Power Dissipation
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0.0001
0.001
TJ(MAX)=175°C
TC=25°C
RθJC=3°C/W
0.01
0.1
1
10
Pulse Width(s)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=3°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB115P10KJ3
CYStek Product Specification