MTB115P10KJ3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
Typical Characteristics (Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
f=1MHz
Crss
10
0
10
20
30
40
50
-VDS, Drain-Source Voltage(V)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
0.1 ^TC^{=25°C, Tj=175°C,}
VGS=-10V, RθJC=3°C/W,
single pulse
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
18
16
14
12
10
8
6
4 _{VGS=-10V, Tj(max)=175°C,}
2 ^{RθJC=3°C/W, single pulse}
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2
0
0
100
VDS=-50V
ID=-13A
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
-ID, Drain Current(A)
MTB115P10KJ3
CYStek Product Specification