MTB115P10KJ3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
-100
-
-
V
VGS=0V, ID=-250μA
-1
-
-2.5
VDS =VGS, ID=-250μA
-
-
±10
VGS=±20V, VDS=0V
IDSS
-
-
-1
μA V_DS =-80V, V_GS =0V
-
-
-25
VDS =-80V, VGS =0V, TJ=125°C
ID(ON) *1
-15
-
-
A VDS =-5V, VGS =-10V
RDS(ON) *1
-
-
82
110
mΩ ^{VGS =-10V, ID=-10A}
107
145
VGS =-4.5V, ID=-8A
GFS *1
-
16.4
-
S VDS =-10V, ID=-10A
Dynamic
Qg *1, 2
-
23.8
35.7
Qgs *1, 2
-
4
-
nC ID=-13A, VDS=-50V, VGS=-10V
Qgd *1, 2
-
4.8
-
td(ON) *1, 2
-
8.6
12.9
tr *1, 2
td(OFF) *1, 2
-
-
19.8
72.8
29.7
109
ns
VDS=-50V, ID=-6.5A, VGS=-10V,
RG=10Ω
tf *1, 2
-
62
93
Ciss
-
1199
-
Coss
-
113
-
pF VGS=0V, VDS=-25V, f=1MHz
Crss
-
51
-
Rg
-
11
-
Ω VDS=0V, f=1MHz
Source-Drain Diode Ratings and Characteristics
IS *1
ISM *1
-
-
-
-
-15
-60
A
VSD *1
-
-0.84
-1.2
V IS=-10A, VGS=0V
trr
Qrr
-
-
27.5
36
41.3
-
ns
nC
IF=-13A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB115P10KJ3
CYStek Product Specification