MTB115P10KJ3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

Spec. No. : C891J3
CYStech Electronics Corp.
Issued Date : 2016.12.23
Revised Date :
Typical Characteristics
50
45
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
10V
5V
4.5V
4V
3.5V
3V
-VGS=2.5V
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
200
180
VGS=-4V
-4.5V
160
-10V
140
120
100
80
60
40
20
0
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
ID=-10A
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=-10V, ID=-10A
1.6
1.2
0.8
0.4
RDS(ON)@Tj=25°C : 82mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB115P10KJ3
CYStek Product Specification