MTB030N04N3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – 40V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 6/ 9
Typical Transfer Characteristics
32
10
28
VDS=5V
9
24
8
20
7
6
16
5
12
4
8
3
2
4
1
0
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
0
0.01
1
D=0.5
Transient Thermal Response Curves
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
TJ(MAX)=150°C
TA=25°C
RθJA=100°C/W
0.1
1
10
100
Pulse Width(s)
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100°C/W
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB030N04N3
CYStek Product Specification