MTB030N04N3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – 40V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
Coss
100
Crss
1.2
ID=1mA
1
0.8
ID=250μ A
0.6
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
Pulsed
Ta=25°C
VDS=5V
1
Gate Charge Characteristics
10
VDS=20V
8
ID=3.9A
6
4
0.1
2
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
0
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
10
100μ s
1
1ms
10ms
0.1
TA=25°C, Tj=150°C,VGS=10V
RθJA=100°C/W, Single Pulse
100ms
DC
0.01
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
10
9
8
7
6
5
4
3
2
1 ^{VGS=10V, RθJC=50°C/W}
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB030N04N3
CYStek Product Specification