MTB030N04N3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – 40V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=125C
Continuous Drain Current @ VGS=10V, TA=25C (Note 3)
Continuous Drain Current @ VGS=10V, TA=70C (Note 3)
Pulsed Drain Current (Note 1, 2)
TC=25°C
Maximum Power Dissipation
TC=125°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDSM
IDM
PD
PDSM
Tj, Tstg
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 2/ 9
Limits
Unit
40
±20
V
8
4.6
4.7
A
3.8
32
3
1
W
1.25
0.8
-55~+175
C
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient , max
Thermal Resistance, Junction-to-Case , max
(Note 3)
RθJA
RθJC
100
C/W
50
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤300μs, duty cycle≤2%
3. Surface mounted on 1 in²copper pad of FR-4 board at steady state; 417C/W when mounted on minimum copper
pad.
4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may
be used if the PCB allows it.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
ΔBVDSS/ΔTj
40
-
-
32
-
V VGS=0V, ID=250μA
-
mV/℃ Reference to 25℃, ID=250μA
VGS(th)
1.0
-
2.5
V VDS=VGS, ID=250μA
GFS
-
9.1
-
S VDS=5V, ID=7.9A
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
-
-
1
VDS=40V, VGS=0V
IDSS
-
-
50
μA VDS=40V, VGS=0V, Tj=125C
-
-
150
VDS=40V, VGS=0V, Tj=175C
-
25.3
34
VGS=10V, ID=7.9A
*RDS(ON)
-
-
-
-
47
65
m
VGS=10V, ID=7.9A, Tj=125C
VGS=10V, ID=7.9A, Tj=175C
-
34.2
46
VGS=4.5V, ID=7.3A
MTB030N04N3
CYStek Product Specification