MTB030N04N3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – 40V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C884N3
Issued Date : 2014.08.20
Revised Date :
Page No. : 4/ 9
Typical Characteristics
32
28
24
20
16
12
8
4
0
0
Typical Output Characteristics
10V, 9V, 8V, 7V, 6V, 5V
4V
3.5V
3V
VGS=2.5V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
100
3V
4.5V
0.8
0.6
Tj=150°C
0.4
10V
10
0.2
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8 9 10
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
270
240
ID=7.9A
210
180
150
120
90
60
30
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
2
VGS=10V, ID=7.9A
1.6
1.2
0.8
RDSON@Tj=25°C : 25.3mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB030N04N3
CYStek Product Specification