MTB025N04Q8 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C884Q8
Issued Date : 2017.02.20
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
30
VDS=10V
25
20
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX)=150°C
250
TA=25°C
Rθ_JA=50°C/W
200
15
150
10
100
5
50
0
0
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
Transient Thermal Response Curves
10
1
D=0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTB012N04Q8
CYStek Product Specification