MTB025N04Q8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C884Q8
Issued Date : 2017.02.20
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
1.2
Ciss
1.0
ID=1mA
100
C _oss
0.8
Crss
f=1MHz
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
VDS=10V
1
VDS=15V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDS(ON)
10
Limited
1
0.1
TA=25°C, Tj=150°C
VGS=10V,RθJA=50°C/W
Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=20V, 25V, 30V
8
from left to right
6
4
2
ID=7A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
8
6
4
2
TA=25°C,RθJA=50°C/W,VGS=10V
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB012N04Q8
CYStek Product Specification