MTB025N04Q8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C884Q8
Issued Date : 2017.02.20
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
ID
Pulsed Drain Current
IDM
Avalanche Current @ L=0.1mH
IAS
Avalanche Energy @ L=1mH, ID=10A, VDD=15V
EAS
Repetitive Avalanche Energy @ L=0.05mH
EAR
Total Power Dissipation
TA=25 °C
TA=70 °C
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.1mH, IAS=6A, VGS=10V, VDD=15V
Limits
Unit
40
V
±20
7.3
5.8
A
30 *1
20
50 *3
mJ
1.6 *2
2.5
W
1.6
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
RθJC
RθJA
20
50
°C/W
Note : 40°C / W when mounted on a 1 in² pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
40
-
-
1
-
2.5
-
5.4
-
-
-
±100
-
-
1
-
-
25
-
17.8
24
-
21.9
32
-
6.3
-
-
1.4
-
-
2.9
-
-
499
-
-
52
-
-
41
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S
VDS =10V, ID=3A
nA
VGS=±20V, VDS=0V
μA
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125°C
mΩ ^{VGS =10V, ID=6A}
VGS =4.5V, ID=5A
nC
VDS=20V, VGS=4.5V, ID=7A
pF
VDS=20V, VGS=0V, f=1MHz
MTB012N04Q8
CYStek Product Specification