MTB025N04Q8 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C884Q8
Issued Date : 2017.02.20
Revised Date :
Page No. : 3/9
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Dynamic
td(ON) *1, 2
-
6.2
-
tr *1, 2
-
17.6
-
ns
td(OFF) *1, 2
-
27
-
tf *1, 2
-
5.8
-
Rg
-
4.8
-
Ω
Source-Drain Diode Ratings and Characteristics
IS *1
-
-
4
A
ISM *3
-
-
16
VSD *1
-
0.75
1.2
V
trr
-
7.9
-
ns
Qrr
-
4.3
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VDS=20V, ID=1A, VGS=10V,
RGS=3.3Ω
f=1MHz
IS=1A, VGS=0V
IF=7A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB012N04Q8
CYStek Product Specification